Program

Short Course

  • Program
  • Short Course
Short courses provide diverse opportunities for professional development and offer attendees the chance to connect with scholars from a range of backgrounds. All short course participants must be registered have a badge before attending. These courses will run from 13:30, Monday, May 29, 2023.

  • May 29 (Mon.) / 13:30~14:30
    Roy Byung Kyu Chung (Kyungpook National University, Korea)
    Hetero epitaxy - a new epi-model to support III-V semiconductors
    Prof. Roy Byung Kyu Chung is currently an assistant professor in Electronic Materials Science and Engineering Department at Kyungpook National University (KNU) in Daegu, South Korea. Before joining KNU, he worked at Samsung as a senior research engineer and at U.S. Army Research Laboratory as a physical scientist. His work involved the development of III-N epi structures for various devices such as nanorod light-emitting diodes, avalanche photodiodes, and semiconductor gain chips for external cavity lasers. He is an expert in the epitaxy of III-N and Ga2O3 with more than 15 years of research experience in epitaxial growth using metal-organic chemical vapor deposition and molecular beam epitaxy. His current research focuses on understanding the hetero-epitaxial growth of meta-stable Ga2O3 on various substrates.
    Hetero epitaxy - a new epi-model to support III-V semiconductors
    Epitaxy is a technique that allows one to grow a thin crystalline layer on another with precise control of composition, thickness, and doping. For conventional semiconductors such as Si and GaAs, native Si and GaAs substrates provide the perfect template for the epitaxy of the same material; this is known as homoepitaxy. Heteroepitaxy, on the other hand, is when the material being grown is different from the substrate material. The success of GaN would not have been possible without heteroepitaxy, as there is no native GaN substrate. One can also take advantage of the crystal structure and material properties of the substrate, as these provide the extra degrees of freedom in various aspects. In this lecture, I will provide a brief overview of various heteroepitaxial growth techniques and discuss the opportunities and limitations in the heteroepitaxy of Ga2O3.
  • May 29 (Mon.) / 14:45~15:45
    In-Hwan Lee (Korea University, Korea)
    Micro and nanorod LEDs for display applications
    In-Hwan Lee received his Ph.D. degree in materials science and engineering from Korea University, Korea in 1997. During 1997-1999, he was a postdoctoral fellow at Northwestern University. Then, he joined Samsung Advanced Institute of Technology, where he led an epitaxial team and developed InGaN/GaN violet LDs. From 2002 to 2017, he was a faculty member at School of Advanced Materials Engineering, Chonbuk National University, Korea. With the sabbatical grant from LG foundation, he was at Yale University during 2008-2009. In 2017 March, he joined Department of Materials Engineering, Korea University, Korea as a full professor. His current research focuses on the development of nanotechnology-inspired novel optoelectronic devices including LEDs, displays (using micro/nano LEDs), photovoltaic devices, sensors, and photocatalysts (for water splitting and CO2 reduction). He has authored or coauthored over 300 peer-reviewed research articles in major scientific journals, and presented over 70 invited seminars and talks around the world, and holds over 20 patents at various stages of the process.
    Micro and Nanorod LEDs for Display Applications
    Micro- and nanorod light-emitting diode (LED) technology is expected to be used in next-generation displays. The opportunities to integrate micro- and nanorod LEDs with electronics, and into large-scale arrays, allow pixel addressable scalable integrated displays. The implications of reduced LED size in necessitating mitigation strategies for nonradiative device edge damage as well as the potential for higher drive current densities are discussed. This short course categorizes, reviews, and analyzes the main challenges and technical solutions in the manufacturing process of micro- and nanorod LED displays, covering epitaxial growth, wafer fabrication, mass transfer, chip-to-panel bonding related issues. In particular, technological challenges including full-color operation, reduced external quantum efficiency, low-yield mass transfer, and structure and process design will also be discussed from the system point of view. In the epitaxial growth section, the requirements, problems, and technical developments of epitaxial growth, especially the growth of AlInGaN red LED, will be reviewed. The LED chip characterization and fabrication section present the reasons for the low quantum efficiency and the methods to overcome this problem. This section also includes the unique characteristics of localized surface plasmon coupling effects, compared with those of traditional LEDs. Various mass transfer technologies are summarized in the mass transfer section. Promises and hurdles for large area displays such as TV and cinema display, and ultra small micro-display for AR (augmented reality) glasses will be addressed.
  • May 29 (Mon.) / 16:00~17:00
    Sanjay Krishna (Ohio State University, USA)
    Fundamentals of infrared detectors: physics, technology and recent adcances
    Sanjay Krishna is the George R Smith Professor of Engineering in the ECE department at the Ohio State University. His research group is involved with the development of next generation semiconductor infrared detectors. He was previously the Director of the Center for High Technology Materials and Professor and Regents Lecturer in the Department of Electrical and Computer Engineering at the University of New Mexico. Sanjay received his M.S. in Electrical Engineering and PhD in Applied Physics from the University of Michigan following which he joined UNM as a tenure track faculty member. Sanjay has received several awards including the Gold Medal from Indian Institute of Technology, Madras, Defense Intelligence Agency Chief Scientist Award for Excellence, North American Molecular Beam Epitaxy Best Student Paper award and NAMBE Young Investigator Award, SPIE Technology Achievement Award, UNM Teacher of the Year award, IEEE Aron Kressel Award and Ralph Boyer Award for Excellence in Undergraduate Education. Sanjay has graduated 31PhD students, published over 300 peer-reviewed journal articles (h-index=59) ten issued patents and several keynote and invited talks. He is the co-founder and CTO of SK Infrared, a start-up involved with the use of IR imaging for defense, aerospace and commercial applications. He is a visiting faculty at IIT Bombay. He is a Fellow of IEEE, OSA and SPIE.
    Fundamentals of infrared detectors: physics, technology and recent adcances
    Mid-infrared imaging (3-25μm) has been an important technological tool for the past 60 years since the first report of photonic infrared detectors in 1950s. There has been a dramatic progress in the development of antimonide based detectors in the past decade with new materials like Type II strained layer superlattices (SLS) demonstrating very good performance. This tutorial will discuss the basics of infrared detectors, mention the phenomenology in the infrared that drive applications and recent advances in antimonide based infrared detectors. Some of the topics that we will cover in this course include figures of merit of infrared detectors, photonic detector architectures, semiconductor heterostructure engineering including bandstructure engineering of quantum confined structures and band diagram engineering using unipolar barrier architectures.