Program

Plenary Speakers

  • Program
  • Plenary Speakers
We are pleased to announce the strong and diverse plenary speaker line-up for CSW 2023. The following visionary speakers will share their experiences and insights on the latest trends and developments in the field of compound semiconductors.

  • Sven Hӧfling (University of Würzburg, Germany)
    Semiconductor quantum dot based quantum technologies
    Sven Höfling received his diploma degree in Applied Physics from the University of Applied Science in Coburg and his Ph.D. degree from Würzburg University. He was with the Fraunhofer Institute of Applied Solid-State Physics, Freiburg, Germany from 2001 to 2002 working on blue and white light emitting diodes. In 2003, he joint Würzburg University for his Ph.D. work on single mode emitting GaAs/AlGaAs quantum cascade lasers. From 2006 to 2013, he was head of the Optoelectronic Materials and Devices Group at Technische Physik, Würzburg University. Sven Höfling was a full professor at the University of St Andrews, Scotland from 2013 to 2021. In 2015 professor he rejoint the University of Würzburg, Germany as a professor of physics and as the the Head of the Chair of Applied Physics and the Gottfried-Landwehr-Laboratory for Nanotechnologies. He is running a 550 sqm clean room with a full chain of semiconductor growth, growth and characterization tools. His research interests include the design, fabrication, and characterization of low-dimensional electronic and photonic nanostructures, including quantum wells and quantum dots, organic semiconductors, high-quality factor microcavities, photonic crystal devices, semiconductor lasers, organic optoelectronics and topological photonics.
    Dr. Höfling is a member of German Physical Society (DPG), a Senior member of IEEE, SPIE and a fellow of the Institute of Physics (IOP) and Optica.
    Semiconductor quantum dot based quantum technologies
    We will summarize recent progress made within our group on self-assembled quantum dot device development for quantum repeater and quantum computer applications. A particular emphasis will be on semiconductor quantum dots embedded in circular Bragg grating cavities. For scalability, spatially deterministic placement of quantum dots in bullseye cavities is pursued and tuning by electric and strain fields are implemented. To apply electric fields, a new device design for electrically contactable circular Bragg grating cavities in labyrinth geometry is employed.
  • Yung-Chung Kao (IntelliEPI, USA)
    Hybrid-epitaxy, a new epi-model to support III-V Semiconductors
    Dr. Yung-Chung Kao is the Chairman/CEO & Founder of IntelliEPI, a leading merchant supplier of III-V compound semiconductor epitaxy materials based on Molecular Beam Epitaxy (MBE) technology to serve electronic and optoelectronic industries. The company was founded in 1999 and is currently trading in the Taipei Exchange.

    Dr. Kao has over 40 years of extensive technical experience in compound semiconductor materials development and manufacturing. Previously, he was at Texas Instruments, Inc. from 1987 to 1998 and served as a Senior Member of Technical Staff where he headed the III-V MBE group at TI Central Research Laboratory. Dr. Kao has authored/co-authored well over 100 technical publications, 2 book chapters, and has been granted 13 US patents, in the areas ranging from MBE technology development, semiconductor materials, to advanced MMIC devices.. He received his Ph.D. in Electrical Engineering from UCLA in 1987, MSEE from Texas A&M University, and his BS in Physics from National Tsing Hua University, Hsinchu, Taiwan in 1978.
    Hybrid-epitaxy, a new epi-model to support III-V Semiconductors
    TBA
  • Alexey Kavokin (Westlake University, China)
    A new semiconductor platform for quantum technologies
  • Jun-Youn Kim (Samsung Display, Korea)
    Innovations for next generation display with III-V materials
    TBA
    Innovations for next generation display with III-V materials
    Micro light emitting diodes (micro-LEDs) based on III-V compound semiconductor have been regarded as an ultimate solution for next generation display due to high luminous efficiency, low power consumption, fast response time, and thermal stability. Their superior characteristics are essential for a variety display application, including high-resolution television with high contrast ratio, high brightness smart watches and augmented-reality (AR) devices. However, there are some thechnical issues to commercialize micro display. Micro-LEDs for display application need to consider their optical and electical properties such as luminance uniformity, efficiency degradation by size reduction, wavelength shift depending on current density, light propagation from emitter and transfer method for fabrication. The poor luminance uniformity and wavelength shift deteriorate the quality of display, and the efficiency degradation problem as miniaturising micro-LED limits to develop the high-resolution display, respectively. Furthermore, transfer method must be developed to reduce production cost and emission beam shape from micro-LEDs must be considered for commercial micro displays. In conclusion, the improvement and development of technology related to micro-LEDs could be a breakthrough for commercializing the high quality micro-LED display.
  • Masaya Notomi (NTT Basic Research Laboratories / Tokyo Institute of Technology, Japan)
    Integrated nanophotonics for optoelectronic computations
    Masaya Notomi received B.E., M.E. and Ph. D. degrees in applied physics from University of Tokyo in 1986, 1988, and 1997. He joined NTT Optoelectronics Laboratories, NTT Corporation, Japan in 1988, and moved to NTT Basic Research Laboratories in 1999. He is currently Senior Distinguished Scientist of NTT Basic Research Laboratories, and heading NTT Nanophotonics Center. Since 2017, he has been cross-appointed as a professor in Department of Physics, Tokyo Institute of Technology, Japan. He has been working on semiconductor quantum nanostructures, and physics and applications of nanophotonics, including photonic crystals and plasmonics. His works involve novel phenomena arising from nanophotonic structures, enhancement of light-matter interactions, and applications for integrated optoelectronic computations. He received IEEE/LEOS Distinguished Lecturer Award (2006), JSPS (Japan Society for the Promotion of Science) Prize (2009), Japan Academy Medal (2009), Commendation for Science and Technology by the Japanese Minister of Education, Culture, Sports, Science and Technology (2010), and Distinguished Achievement and Contributions Award of IEICE (The Institute of Electronics, Information and Communication Engineers) (2021). IEEE Fellow since 2013.
    Integrated nanophotonics for optoelectronic computations
    Recently, there are growing expectations for optoelectronic computing because of increasing demands for the low-latency computation capacity beyond CMOS processors, especially for deep learning applications. Optics enables energy-efficient and ultralow-latency computations for a certain area, such as for vector-matrix multiplications (VMMs). We regard that optoelectronic accelerators based on optical VMMs will be crucial for future ICT, which would be consisting of (1) linear transformation optical circuits, (2) nonlinear elements, and (3) efficient OE/EO conversion devices. In this talk, we will show integrated nanophotonics will play a crucial role for these three factors. The most important advantage of optics for computation lies in (1). We will show the impact of controllable light interference in photonic integrated circuits. Despite of (1), we need some nonlinearity for efficient computation systems, which used to be weakness of optics. As for (2), we will show that a combination of functional devices and materials, including III/V semiconductors or two-dimensional materials enables integrable efficient nonlinear elements in optical circuits. Finally, we emphasize that any optical circuits should be efficiently merged with electronic circuits. As for (3), we believe that nanophotonic devices would lead to a paradigm shift for optoelectronic integration, and we will show some of examples.


※ As of Jan. 20, 2023 (Being updated)  |  Alphabetical Order by Surname