Program

Keynote Speakers

  • Program
  • Keynote Speakers

01. Epitaxy, Fabrication, and Related Technologies

Name Affiliation, Country Presentation Title
Sanjay Krishna
Ohio State University, USA Antimonide Based Infrared Avalanche Photodiodes

02. RF and THz Devices

Name Affiliation, Country Presentation Title
Kyung-Hoon Yang
KAIST, Korea Status and Perspective of Resonant Tunneling Diode Technology for Future mm-Wave and Terahertz (THz) Electronics
Cheng-Kuo Lin
Win Semiconductor, Taiwan Study of GaAs pHEMT Device for D-band Power Amplifier (PA) Application

03. High Power and High Frequency Electron Devices

Name Affiliation, Country Presentation Title
Yuhao Zhang
Virginia Tech., USA Multidimensional GaN Devices for Efficient Power Electronics

04. Wide Bandgap Semiconductors

Name Affiliation, Country Presentation Title
Bruno Daudin
University Grenoble Alpes, France GaN/AlN nanowires for UV-C emission : growth, electrical, structural and optical properties

05. Photonic and Optoelectronic Devices and Related Technologies

Name Affiliation, Country Presentation Title
Luke Mawst
University of Wisconsin-Madison, USA High-Performance Quantum Cascade Lasers grown by MOCVD
Wounjhang (Won) Park
University of Colorado, USA Biosensing with Plasmon Enhanced Upconversion Luminescence

06. Semiconductor Physics, Spintronics, Ferroelectronics, and Novel Device Concepts

Name Affiliation, Country Presentation Title
Masaaki Tanaka
University of Tokyo, Japan A new class of Fe-doped III-V ferromagnetic semiconductors with high Curie temperature and their quantum heterostructures
J. Joshua Yang
University of Southern California, USA Thousands Of Conductance Levels In Memristors Integrated On CMOS

07. Nanostructure and Nano Characterization

Name Affiliation, Country Presentation Title
David J Smith
Arizona State University, USA Investigating epitaxial heterostructures using aberration-corrected electron microscopy

11. Optoelectronics, Integrated Photonics, and III-V Electronic Devices on Si

Name Affiliation, Country Presentation Title
Shinji Matsuo
NTT Device Technology Laboratories, Japan Heterogeneously integrated membrane photonics devices on Si platform

SS1. Emerging Materials and Devices

Name Affiliation, Country Presentation Title
Saptarshi Das
Pennsylvania State University, USA Emerging 2D memtransistors for bio-inspired Computing

SS3. High-Resolution and Multi-Functional Display Technology

Name Affiliation, Country Presentation Title
Jeehwan Kim
MIT, USA Wafer-free Heterogeneous Integration for next generation electronics: advanced display, 3D integration, and bioelectronics
Tae-Woo Lee
Seoul National University, Korea Perovskite nanocrystal engineering for bright, efficient and stable light-emitting diodes

SS4. New-Conceptual Quantum Information and Communication

Name Affiliation, Country Presentation Title
Masaya Kataoka
National Physical Laboratory, UK Hot-electron quantum optics
Pasquale Scarlino
EPFL, Switzerland Hybrid Circuit Quantum Electrodynamics with Semiconductor QDs and Superconducting Resonators
Shintaro Takada
National Institute of Advanced Industrial Science and Technology, Japan Flying electron qubits
Silvano De Franceschi
Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38000 Grenoble, France Hole spin qubits based on silicon technology