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Program
Program

Keynote Speakers

  • Program
  • Keynote Speakers

02. RF and THz Devices

Name Affiliation, Country Presentation Title
Kyung-Hoon Yang
KAIST, Korea Status and Perspective of Resonant Tunneling Diode Technology for Future mm-Wave and Terahertz (THz) Electronics

03. High Power and High Frequency Electron Devices

Name Affiliation, Country Presentation Title
Yuhao Zhang
 Virginia Tech., USA Multidimensional GaN Devices for Efficient Power Electronics

04. Wide Bandgap Semiconductors

Name Affiliation, Country Presentation Title
Bruno Daudin
 University Grenoble Alpes, France GaN/AlN nanowires for UV-C emission : growth, electrical, structural and optical properties

05. Photonic and Optoelectronic Devices and Related Technologies

Name Affiliation, Country Presentation Title
Luke Mawst
University of Wisconsin-Madison, USA High-Performance Quantum Cascade Lasers grown by MOCVD

06. Semiconductor Physics, Spintronics, Ferroelectronics, and Novel Device Concepts

Name Affiliation, Country Presentation Title
Masaaki Tanaka
University of Tokyo, Japan A new class of Fe-doped III-V ferromagnetic semiconductors with high Curie temperature and their quantum heterostructures

07. Nanostructure and Nano Characterization

Name Affiliation, Country Presentation Title
David J Smith
Arizona State University, USA Investigating epitaxial heterostructures using aberration-corrected electron microscopy
Yoshihiko Kanemitsu
Kyoto University, Japan TBA

11. Optoelectronics, Integrated Photonics, and III-V Electronic Devices on Si

Name Affiliation, Country Presentation Title
Shinji Matsuo
 NTT Device Technology Laboratories, Japan Heterogeneously integrated membrane photonics devices on Si platform

SS1. Emerging Materials and Devices

Name Affiliation, Country Presentation Title
Saptarshi Das
 Pennsylvania State University, USA Emerging 2D memtransistors for bio-inspired Computing

SS3. High-Resolution and Multi-Functional Display Technology

Name Affiliation, Country Presentation Title
Jeehwan Kim
 MIT, USA Wafer-free Heterogeneous Integration for next generation electronics: advanced display, 3D integration, and bioelectronics
Tae-Woo Lee
 Seoul National University, Korea Perovskite nanocrystal engineering for bright, efficient and stable light-emitting diodes

SS4. New-Conceptual Quantum Information and Communication

Name Affiliation, Country Presentation Title
Masaya Kataoka
National Physical Laboratory, UK Hot-electron quantum optics
Pasquale Scarlino
EPFL, Switzerland Hybrid Circuit Quantum Electrodynamics with Semiconductor QDs and Superconducting Resonators
Shintaro Takada
National Institute of Advanced Industrial Science and Technology, Japan Flying electron qubits
Silvano de Franceschi
CEA Grenoble, France Hole spin qubits based on silicon technology
02. RF and THz Devices

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Kyung-Hoon Yang
KAIST, Korea

Biography

Kyounghoon Yang received the B.S. and M.S. degrees in electronic engineering from Seoul National University, Seoul, Korea, in 1984 and 1986, respectively, and the Ph.D. degree in electrical engineering from the University of Michigan, Ann Arbor, in 1994.
He was a Research Scientist from 1995 to 1999 at the Center for High-Frequency Microelectronics in the University of Michigan, where he was engaged in research on a wide spectrum of high-speed microelectronics, including compound semiconductor heterojunction devices, microwave power amplifiers, and high-speed optoelectronic devices and ICs. In May 1999, he joined as an Assistant Professor in the Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea, where he is currently a Professor.
He received the Award of Korea Ministry of Education, Science and Technology at Nano Korea 2008 for his pioneering work on “Practical Applications of Quantum-effect Resonant Tunneling Diode (RTD) Technology”, accomplished in the National Program of Tera-level Nano-devices for the 21st Century Frontier Programs, and received the Award of Scientist of the Month, Daejeon in 2011.
He has served as the Associate Dean of College of Engineering and the Director of Information Science & Technology, College of Engineering at KAIST from 2015 to 2016.

His current research interests include the fabrication, modeling, and characterization of high-speed, high-functionality nanoscale devices and their integration into digital/analog/optoelectronic and millimeter-wave/Terahertz (THz) quantum-effect Resonant-Tunneling-Device (RTD) based integrated circuits and neuromorphic 3D-nanosystems.

Lecture Summary

Status and Perspective of Resonant Tunneling Diode Technology for Future mm-Wave and Terahertz (THz) Electronics
The millimeter-wave (mmW) to terahertz (THz) frequencies have been a key frequency band for the present and upcoming ultra-high-speed wireless transmission, high-resolution imaging, and remote sensing applications. In particular, the THz region, which is traditionally known as the dead zone, is receiving great attention as the last piece of the RF spectrum puzzle in several wireless communication systems.

In the first part of this talk, the inherent key features of resonant tunneling diodes (RTDs) are discussed with a brief overview on the state-of-the-art RTD-based THz signal sources and detectors which are the key components of the THz wireless systems.

And then, the talk focuses on co-integration of the RTD with the high-frequency transistors, such as heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) in a combined form of device structure and fabrication, which has been reported very effective for performance enhancement as well as practical implementation of RTD-based mmW monolithic microwave (MMICs) and optoelectronic integrated circuits (OEICs).

Finally, the challenges, opportunities, and future perspectives of the RTD technology for upcoming THz applications are presented with emphasis on a strong need for successful integration of the state-of-the-art RTD and THz-cutoff-frequency level transistors in terahertz monolithic integrated circuits (TMICs).
03. High Power and High Frequency Electron Devices

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Yuhao Zhang
KAIST, Korea

Biography

Yuhao Zhang is an assistant professor at the Center for Power Electronics Systems (CPES) of Virginia Tech. CPES is one of the largest university-based power electronics research centers in the U.S. Before joining CPES in 2018, he worked as a postdoctoral associate at the Massachusetts Institute of Technology (MIT) from 2017 to 2018. He received his Ph. D. and S. M., both in electrical engineering from MIT in 2017 and 2013, respectively. Before joining MIT, he received his B. S. in physics from Peking University in 2011. His research interest is at the intersection of power electronics, microelectronic devices, and advanced materials. He has authored over 100 journal papers and conference proceedings and holds 5 granted U. S. patents. He received the MIT Microsystems Technology Laboratories Doctoral Dissertation Award in 2017, the IEEE George Smith Award in 2019, the National Science Foundation CAREER Award in 2021, the 2021 Outstanding New Assistant Professor Award and 2022 Faculty Fellow Award of Virginia Tech Engineering.

Lecture Summary

Multidimensional GaN Devices for Efficient Power Electronics
Power electronics technologies provide electrical energy conversion using semiconductor devices. The global power device market reaches US$40 billion and is rapidly expanding, driven by applications like electric vehicles, data centers, consumer electronics, electric grids and renewable energy processing.

Power device advances are driven by materials and device architectures. In addition to using wide- or ultrawide-bandgap materials, multidimensional architectures - such as superjunction, multi-channel and multi-gate - can also improve device performance, regardless the underlying material technology. These structures enable electrostatics engineering in additional dimensions and bring the benefits of geometrical scaling into power devices.

This talk presents our efforts in developing multidimensional power devices in GaN, including the demonstration of vertical GaN FinFETs and superjunction as well as lateral GaN multi-channel devices. These devices have set several new records in power device performance and expanded the GaN’s application space from 10 V up to 10 kV. They hold great potential for advancing the speed, efficiency, and form factor of power electronics systems, and some of them are currently being commercialized globally. The new device physics opens a pathway for advancing power devices based on other materials such as ultra-wide bandgap semiconductors.
04. Wide Bandgap Semiconductors

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Bruno Daudint
University Grenoble Alpes, France

Biography

Bruno DAUDIN is a senior scientist at CEA-Grenoble. During the last 20 years, he focused his interest on III-nitride wide band gap material, with a special dedication to their growth by molecular beam epitaxy. Following his pioneering work in the field of GaN quantum dots, his current scientific interest covers the growth of III-nitride nanowires and the understanding of their electrical, structural and optical properties in view of opto-electronical applications.

Lecture Summary

GaN/AlN nanowires for UV-C emission : growth, electrical, structural and optical properties
In a context of short-term banning of mercury-containing devices motivated by sanitary and environmental considerations, the market of UV-C light emitting diodes (LEDs) is expanding rapidly, in particular for water, air and surface disinfection applications. AlGaN materials are ideally suited for the realization of UV LEDs since they are applicable throughout the UV-B (320-280 nm) ranges and even access a large segment of the UV-C (280-200 nm) spectral range. However, the efficiency of planar AlGaN LEDs in the UV-C range is still low, being plagued by a number of limitations such as a limited p-type doping, carrier injection, light extraction and extended defect density. In this context, it will be shown that GaN/AlN nanowires heterostructures can be a realistic alternative. The growth, electrical doping, structural and optical characterization of such NW heterostructures will be comprehensively discussed, with the purpose of evaluating their potential and limitations in view of UV-C LEDs elaboration.
05. Photonic and Optoelectronic Devices and Related Technologies

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Luke Mawst
University of Wisconsin-Madison, USA

Biography

L.J. Mawst received the B.S. degree in engineering physics and the M.S. and Ph.D. degrees in electrical engineering from the University of Illinois at Urbana-Champaign in 1982, 1984, and 1987, respectively. He joined TRW, Inc., Redondo Beach, CA, in 1987, where he was a senior scientist in the research center, engaged in design and development of semiconductor lasers using MOCVD crystal growth. He is currently the Grainger Professor in the Electrical and Computer Engineering Department at the University of Wisconsin-Madison, where he is involved in the development of novel III/V compound semiconductor device structures, including quantum dot lasers, active photonic crystal lasers, lasers employing metamorphic buffer layers, and quantum cascade lasers. He was a co-founder of Alfalight, Inc., and Intraband LLC. Prof. Mawst has authored or coauthored more than 300 technical papers and holds 26 patents. He received the IEEE Photonics Society Aron Kressel Award in 2019 and is a Fellow of IEEE.

Lecture Summary

High-Performance Quantum Cascade Lasers grown by MOCVD
Furthering the development of high-performance mid-infrared quantum cascade lasers (QCLs) requires a deeper understanding regarding the influence of structural and thermal properties on device performance. The active-region interfacial properties, such as roughness and compositional grading strongly influence the achievable performance metrics. Techniques such as atom probe tomography are helping to elucidate the interfacial properties of the active region, which can then be used to improve the ability of QCL-design software to reflect experiment.

Many applications for QCLs require CW high output powers, and the InGaAs/AlInAs material system on an InP substrate provides the most prominent platform. The direct MOCVD growth of QCLs on alternate, lattice-mismatched substrates can help pave the way for lower manufacturing cost, integration with photonic-electronic circuits, and expansion of the QCL design space. Various III/V-semiconductor buffer layers can be employed to provide suitable growth platforms, but until recently little has been reported regarding their application to intersubband-transition devices such as QCLs. Studies of QCLs on mismatched substrates (GaAs and Si) help to elucidate the role of residual threading dislocations on device performance. QCLs being unipolar devices, which rely on the tunnel injection of carriers, appear to be less sensitive to threading dislocations than diode lasers.
06. Semiconductor Physics, Spintronics, Ferroelectronics, and Novel Device Concepts

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Masaaki Tanaka
University of Tokyo, Japan

Biography

Professor Masaaki Tanaka obtained B.E., M.E., and Ph.D. degrees in electronic engineering from the University of Tokyo, Japan, in 1984, 1986, and 1989, respectively. In 1989, he joined the Department of Electrical and Electronic Engineering at the University of Tokyo as a research associate and became a lecturer in 1990. There, he started to study heterostructures of dissimilar materials consisting of semiconductors, metals, and magnetic materials. In 1992, he joined Bell Communications Research (Bellcore) at Red Bank, New Jersey, USA, as a visiting research scientist, where he studied molecular beam epitaxy and properties of ferromagnet/semiconductor heterostructures. In 1994, he returned to the University of Tokyo as an associate professor. Since then, he has been studying various materials, spin-related phenomena, and devices including magnetic semiconductors, ferromagnet/semiconductor heterostructures and nanostructures, magnetic tunnel junctions, spin-based transistors. He is currently a professor of electrical and electronic engineering, and Director of the Center for Spintronics Research Network (CSRN), at the University of Tokyo. He has authored and coauthored over 320 scientific publications, and presented over 170 invited talks at international conferences and meetings.

Lecture Summary

By actively using not only charge transport of electrons and holes but also their spins, we can create a variety of new phenomena and functional materials. This field, called spintronics, is emerging and rapidly making progress in many subfields. In this presentation, we focus on one of the most important materials, ferromagnetic semiconductors (FMSs) which have the properties of both ferromagnets and semiconductors, and their applications. We review the recent progress in the studies of a new class of FMSs, Fe-doped narrow-gap III-V semiconductors, and their applications. Using low-temperature molecular beam epitaxy, we have successfully grown both p-type FMS [(Ga,Fe)Sb [1], (Al,Fe)Sb [2]] and n-type FMSs [(In,Fe)As [3], (In,Fe)Sb [4]]. The most notable feature in these Fe-based FMSs is that the Curie temperature TC increases monotonically as the Fe content increases; and there is a tendency that TC is higher as the bandgap is narrower. Intrinsic ferromagnetism with high TC (> 300 K) has been observed in (Ga1-x,Fex)Sb with x > 23% [1] and (In1-x,Fex)Sb with x > 16% [4], which are promising for practical spintronic devices operating at room temperature.
Furthermore, we extended this study to quantum heterostructures containing FMSs, and revealed a variety of novel phenomena [5-12]; these new properties of the Fe-doped FMS-based heterostructures and devices provide novel functionalities for future spin-based electronics.
This work has been performed in collaboration with Drs. Le Duc Anh, Pham Nam Hai, Kosuke Takiguchi, Nguyen Thanh Tu, and Shobhit Goel.
07. Nanostructure and Nano Characterization

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David J Smith
Kyoto University, Japan

Biography

David Smith is Regents’ Professor of Physics at Arizona State University. He received his Ph.D. in Physics (1978) and D.Sc. (1988) from the University of Melbourne. He was Director, Cambridge University High Resolution Electron Microscope (1980 to 1984), Director, ASU Center for High Resolution Electron Microscopy (1991 to 2006), and President of the Microscopy Society of America (2009). His long-term research interests have centered on the development and applications of atomic-resolution electron microscopy, with recent interests in oxide and semiconductor heterostructures. He is a Fellow of American Physical Society, Materials Research Society, Microscopy Society of America, and Institute of Physics (UK).

Lecture Summary

Investigating epitaxial heterostructures using aberration-corrected electron microscopy
The recent emergence of aberration-correction methods has pushed electron microscope resolving power to well beyond the 1-Å resolution barrier, generating much excitement and activity in the microscopy community and greatly impacting the exploration of many types of advanced materials. The unrivalled imaging (and spectroscopic) capabilities of aberration-corrected electron microscopes (ACEMs) have enabled enhanced insights to be gained into the local atomic structure and chemical bonding at heterostructured interfaces. For elemental and compound semiconductors it is even possible to resolve the projections of individual atomic columns, often referred to as dumbbells, in the common <110> projection. Composition profiles across heteroepitaxial interfaces, as well as bonding information at the atomic level, can also be achieved. This talk will highlight ongoing investigations of oxide/oxide, semiconductor/semiconductor, and oxide/semiconductor heterostructures. Ongoing challenges and opportunities will also be briefly discussed.
07. Nanostructure and Nano Characterization

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Yoshihiko Kanemitsu
Kyoto University, Japan

Biography

TBA

Lecture Summary

TBA
08. Oxide Semiconductors

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Philip J. Ryan
Argonne National Lab, U.S.

Biography

TBA

Lecture Summary

TBA
11. Optoelectronics, Integrated Photonics, and III-V Electronic Devices on Si

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Shinji Matsuo
NTT Device Technology Laboratories, Japan

Biography

Dr. Shinji Matsuo is a Senior Distinguished Researcher at NTT Corporation. He received the B.E. and M.E. degrees in electrical engineering from Hiroshima University, Hiroshima, Japan, in 1986 and 1988, and the Ph.D. degree in electronics and applied physics from Tokyo Institute of Technology, Tokyo, Japan, in 2008. In 1988, he joined NTT Opto-electronics Laboratories, Atsugi, where he was engaged in research on photonic functional devices using MQW-pin modulators and VCSELs. In 1997, he researched optical networks using WDM technologies at NTT Network Innovation Laboratories, Yokosuka. Since 2000, he has been researching directly modulated lasers, modulators, and InP/Si-based photonic integrated circuits at NTT Device Technology Laboratories, Atsugi. Dr. Matsuo is a Fellow of Optica and IEEE.

Lecture Summary

Heterogeneously integrated membrane photonics devices on Si platform
Silicon photonics is a platform for the low-cost production of large-scale photonic integrated circuits (PICs). This is why heterogeneous integration of lasers and modulators based on compound semiconductors has attracted much attention. We have proposed and developed membrane III-V devices in which a thin III-V membrane is sandwiched by low refractive index materials. Membrane III-V devices provide high-modulation efficiency due to their large optical factor. In terms of fabrication, the membrane structure allows us to grow a high-quality III-V layer on InP template on Si substrate. Therefore, the same fabrication process can be used as for devices fabricated on the InP substrate, i.e., fabrication of the buried heterostructure and integration of different bandgap materials. In addition, since the effective refractive index of the membrane III-V device is in the same range as that of the Si waveguide, the membrane III-V device can be efficiently coupled to the Si waveguide using a simple tapered waveguide.
In this presentation, we will describe our recent results on directly modulated lasers, external modulators, and photonic crystal lasers on the Si platform.
SS1. Emerging Materials and Devices

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Saptarshi Das
Pennsylvania State University, USA

Biography

Dr. Das received his B.Eng. degree (2007) in Electronics and Telecommunication Engineering from Jadavpur University, India, and Ph.D. degree (2013) in Electrical and Computer Engineering from Purdue University. He was a Postdoctoral Research Scholar (2013-2015) and Assistant Research Scientist (2015-2016) at Argonne National Laboratory (ANL). Dr. Das joined the Department of Engineering Science and Mechanics (ESM) at Penn State University in January 2016. Dr. Das was the recipient of Young Investigator Award from United States Air Force Office of Scientific Research in 2017 and National Science Foundation (NSF) CAREER award in 2021. Das Research Group at Penn State leads a new multidisciplinary area of science, namely biomimetic sensing, neuromorphic computing, and hardware security inspired by natural designs found in the animal world.

Lecture Summary

Emerging 2D memtransistors for bio-inspired Computing
My group is developing a new paradigm of sensing, computing, storage, and hardware security inspired by the neurobiological architectures and neural algorithms found inside various animal brains that allow evolutionary success in resource constrained environments. Towards the realization of our vision, we exploit unique electronic and optoelectronic properties of layered two dimensional (2D) materials such as graphene, MoS2, WSe2, black phosphorous etc., to design high performance, ultra-low-power, artificially intelligent, and inherently secure solid state devices inspired by natural intelligence. For example, we have mimicked auditory information processing in barn owl (Nature Communications, 10, 3450, 2019), collision avoidance by locust (Nature Electronics, 3, 646-655, 2020), and subthreshold signal detection by paddlefish and cricket using stochastic resonance (Nature Communications, 2020). We have also mimicked probabilistic computing in animal brains using low-power Gaussian synapses (Nature Communications, 10, 4199, 2019), and memristive graphene synapses (Nature Communications, 11, 5474, 2020) and realized biomimetic devices that can emulate neurotransmitter release in chemical synapses (ACS Nano, 11, 3, 2017) and neural encoding in afferent neurons (Nature Communications, 12, 2143, 2021). We have also made these device secure through SAT-attack resistant hardware obfuscation using camouflaged 2D heterostructures (ACS Nano, 15, 2, 2021) and by realizing machine learning resilient and reconfigurable physically unclonable functions (Nature Electronics 4, 364-374, 2021).
SS3. High-Resolution and Multi-Functional Display Technology

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Jeehwan Kim
MIT, USA

Biography

Prof. Jeehwan Kim is a tenured faculty at MIT. His research group’s focuses on material innovations for next generation computing and electronics. Prof. Kim joined MIT in September 2015. Before joining MIT, he was a Research Staff Member at IBM T.J. Watson Research Center in Yorktown Heights, NY since 2008 right after his Ph.D. He worked on next generation CMOS and energy materials/devices at IBM. Prof. Kim is a recipient of 20 IBM high value invention achievement awards. In 2012, he was appointed a “Master Inventor” of IBM in recognition of his active intellectual property generation and commercialization of his research. After joining MIT, he continuously worked nanotechnology for advanced electronics/photonics. As its recognition, he received LAM Research foundation Award, IBM Faculty Award, DARPA Young Faculty Award, and DARPA Director’s Fellowship. He is now serving as Samsung Fellow. He is an inventor of > 200 issued/pending US patents and an author of > 50 articles in peer-reviewed journals. He currently serves as Associate Editor of Science Advances, AAAS. He received his B.S. from Hongik University, his M.S. from Seoul National University, and his Ph.D. from UCLA, all of them in Materials Science.

Lecture Summary

Wafer-free Heterogeneous Integration for next generation electronics:
advanced display, 3D integration, and bioelectronics
For future of electronics such as bioelectronics, 3D integrated electronics, and bendable electronics, needs for flexibility and stackability of electronic products have substantially grown up. However, conventional wafer-based single-crystalline semiconductors cannot catch up with such trends because they are bound to the thick rigid wafers such that they are neither flexible nor stackable. For the past decade, my research group has focused on mitigating such performance-mechanical compliance dilemma by developing methods to peel and transfer chips from a wafer. In today’s talk, I will discuss about our strategies to realize such a dream electronic system [1-5] and how these strategies unlock new ways of manufacturing advanced electronic systems [6-10]. I will highlight our remote epitaxy technique that can produce single-crystalline freestanding membranes from any semiconducting materials with their excellent performances. In addition, I will present unprecedented artificial heterostructures enabled by stacking of those freestanding membranes, e.g., world’s smallest vertically-stacked full color micro-LEDs [10], world’s best multiferroic devices [7], battery-less wireless e-skin [9,11], and reconfigurable hetero-integrated chips with AI accelerators [8,12].
SS3. High-Resolution and Multi-Functional Display Technology

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Tae-Woo Lee
Seoul National University, Korea

Biography

Tae-Woo Lee is a professor in the Department of Materials Science and Engineering at Seoul National University, Korea. He received his Ph.D. in Chemical Engineering from Korea Advanced Institute of Science and Technology (KAIST), Korea, in 2002. He joined Bell Laboratories, Lucent Technologies, USA, as a postdoctoral researcher in 2002 and then worked at Samsung Advanced Institute of Technology as a member of the research staff (2003-2008). He was an assistant and associate professor in the Department of Materials Science and Engineering at Pohang University of Science and Technology (POSTECH), Korea, until August 2016. He received a prestigious Korea Young Scientist Award from the President of Korea in 2008 and the Scientist of the Month Award from the ministry of science, ICT and future planning in 2013. He was honored as 2020 Materials Research Society (MRS) Fellow. He is author and co-author of 270 papers in high-impact journals including Science, Nature, Nature Photonics, Nature Nanotechnology, Nature Review Materials, Nature Biomedical Engineering, Science Advances, Nature Communications, Joule, PNAS, Energy and Environmental Science, Advanced Materials, Angewandte Chemie, and ACS Nano. He is also the inventor or co-inventor of 387 patented technologies. He currently serves as an editorial board member on the Journals of Advanced Materials (Wiley), FlatChem (Elsevier), EcoMat (Wiley), Nano Convergence (Springer), and Semiconductor Science and Technology (IOP). His research focuses on organic, organic-inorganic hybrid perovskite, and carbon materials, and their applications to flexible electronics, printed electronics, displays, solid-state lightings, solar energy conversion devices, and bioinspired neuromorphic devices. His work in flexible bioelectronics fields includes flexible, stretchable printed nanowire electrodes, deformable organic nanowire transistors for healthcare applications, and flexible, stretchable artificial synapses and nerves for neuromorphic bioelectronics as well as neuromorphic computing.

Lecture Summary

Perovskite nanocrystal engineering for bright, efficient and stable light-emitting diodes
In this talk, strategies for high-efficiency, stable and large-area perovskite light-emitting diodes (PeLEDs) will be delivered. By means of comprehensive defect suppression and in-situ core/shell, highly efficient and stable PeLEDs with EQE over 28% were achieved. In addition, efficient, large-area PeLEDs with 900 mm2 pixel size were fabricated by modified-bar coating.
SS4. New-Conceptual Quantum Information and Communication

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Masaya Kataoka
National Physical Laboratory, UK

Biography

Dr Masaya Kataoka obtained his PhD degree from the Department of physics, University of Cambridge in 2000. He worked as a postdoctoral researcher at the Cavendish Laboratory and Cambridge-MIT Institute. He joined National Physical Laboratory in 2009, and currently leads the Quantum Electrical Metrology Group as the Science Area Leader. He is also a visiting professor at the University of Strathclyde. His main research interest is the development of single-electron devices towards applications in metrology and quantum technologies.

Lecture Summary

Hot-electron quantum optics
Full control of individual electrons in solid-state devices would lead to numerous applications. In metrology, accurate single-electron transfer is expected to become a new standard for the SI ampere. In quantum information processing, individual or collective electronic states are used to store quantum information. Single-photon sources used in quantum optics applications rely on the state transition of individual electrons. The last decade saw a rapid progress in the development of single-electron sources, electron state tomography, and the detection of electron-electron interactions. These experiments are often classed as “electron quantum optics”, in analogy to “photonic” quantum optics. In this talk, I will present the recent development in electron quantum optics experiments using hot electrons that are excited and isolated from the Fermi sea by ~ 100 meV. I will give an overview on the works that have demonstrated the generation, detection, and interaction of hot electrons, and will show the potential of hot-electron quantum optics towards the goal of full electron control.
SS4. New-Conceptual Quantum Information and Communication

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Pasquale Scarlino
EPFL, Switzerland

Biography

Pasquale Scarlino obtained his master's degree in Physics at the University of Salento, Lecce (Italy), in February 2011. He received his Ph.D. in Physics in February 2016 under the supervision of Prof. L.M.K. Vandersypen in the Quantum Transport Group at TU Delft. He contributed to the first realization and control of a spin qubit defined in a Silicon-Germanium quantum well. He underwent post-doctoral training in Prof. A. Wallraff's group at ETH Zurich, where he worked on integrating semiconductor and superconductor technologies. Here, he pioneered microwave-photon-mediated strong coupling between charge and spin qubits in semiconductor devices. From June 2019 to October 2020, he worked as a Senior Researcher at Microsoft Station Q and the Center for Quantum Devices in Copenhagen, focusing on semiconductor-superconducting hybrid hardware for topologically protected quantum computation. Since November 2020, he has been a tenure track Assistant Professor of Physics in the School of Basic Sciences at the EPFL, where he founded the Hybrid Quantum Circuit (HQC) laboratory.

Lecture Summary

Hybrid Circuit Quantum Electrodynamics with Semiconductor QDs and Superconducting Resonators
Semiconductor qubits rely on controlling the charge and spin degrees of freedom of electrons or holes confined in quantum dots (QDs). As semiconductor qubit-qubit coupling is typically short-ranged, the distance between interacting QD-qubits must not exceed the extent of the wavefunction of the confined particles mediating said coupling (a few hundred nanometers). This represents a strong constraint toward scaling up QD-based quantum technology.
I will illustrate a novel method for potentially scaling up QDs-qubits, inspired by techniques initially developed for circuit QED. I will present the strong coupling limit of individual electron charges [1,2] confined in GaAs QDs, obtained by using the enhancement of the electric component of the vacuum fluctuations of a resonator with impedance beyond the typical 50 Ohm of standard coplanar waveguide technology. I will further demonstrate how to in-situ tune the strength of the electric dipole interaction between a double-QD charge system and the resonator [3]. The methods and techniques developed in this work are transferable to QD devices based on other material systems and can be beneficial for spin-based hybrid systems [4].
Indeed, promoting interactions within quantum systems with distinct degrees of freedom will enable the creation of unique, more sophisticated, and yet versatile devices paving the way for investigating light-matter interaction at the fundamental level in novel and unconventional regimes and opening new venues for applications in quantum information technology.
SS4. New-Conceptual Quantum Information and Communication

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Shintaro Takada
National Institute of Advanced Industrial Science and Technology, Japan

Biography

  • Position: Senior Researcher
  • Affiliation: Quantum Electrical Standards Group, Research Institute for Physical Measurement, National Metrology Institute of Japan (NMIJ), National Institute of Advanced Industrial Science and Technology (AIST), Japan
  • Short affiliation: AIST
  • Research topic: Condensed matter physics, Quantum devices in semiconductor electronic systems
  • Web page: Shintaro Takada (aist.go.jp)

Lecture Summary

Flying electron qubits
Flying qubits - usually associated with photons - are originally intended to serve as a communication link within a quantum computer and represent a vital part of the global roadmaps towards secure data transmission. An alternative approach for flying qubits is single electrons propagating in a semiconductor quantum device [1-4]. Here we present the development of a flying qubit architecture, based on an electronic Mach-Zehnder interferometer (MZI) using ultrashort electronic charge pulses. Injecting such ultrashort wave packets in a MZI allows manipulation of the quantum state of the qubit in flight, while it is being transferred coherently by means of electrostatic gates. Using a pump and probe technique we demonstrate time-resolved measurement of ultrashort electron wave packets with a temporal width down to 25 ps - the shortest reported to date [5]. Furthermore, we observe for the first-time controlled quantum interference when injecting such ultrashort charge pulses into the MZI of a length of 14µm. Strikingly, we observe an increase of the visibility of the Aharonov-Bohm oscillations when the temporal width of the charge pulses is reduced. These results pave the way for the first demonstration of a flying electron qubit with ultrashort charge pulses at the single electron level.
SS4. New-Conceptual Quantum Information and Communication

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Silvano de Franceschi
CEA Grenoble, France

Biography

TBA

Lecture Summary

Hole spin qubits based on silicon technology
M. Bassi1, C. Yu, B. Brun-Barrière1, S. Zihlmann1, V. Schmitt1, É. Dumur1, X. Jehl1, R. Maurand1, B. Bertrand2, H. Niebojewski2, M. Vinet2, J. C. Abadillo-Uriel3, V. Michal3, E. Rodriguez Mena3, M. Filippone3, Y.-M. Niquet3, S. De Franceschi1,* 1Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38000 Grenoble, France 2Univ. Grenoble Alpes, CEA, LETI, Minatec Campus, 38000 Grenoble, France. 3Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, MEM, 38000 Grenoble, France
*E-mail : silvano.defranceschi@cea.fr

Hole spins in silicon-based quantum dots are emerging as a promising candidate for the realization of scalable spin-qubit architectures. Following an introduction to the field, we report recent advances in the development of hole-spin qubits based on foundry-compatible silicon-nanowire MOS devices: the discovery of operational sweet spots maximizing hole-spin coherence1 and the first demonstration of a strong-coupling between a hole-spin and a microwave photon in a superconducting resonator2.

Keywords-spin; silicon; hole; quantum computing
References:
1. Piot et al., Nat. Nanotechnol. 17, 1072-1077 (2022). https://doi.org/10.1038/s41565-022-01196-z
2. Yu et al., Nat. Nanotechnol. (2023). https://doi.org/10.1038/s41565-023-01332-3