Program

Invited Speakers

  • Program
  • Invited Speakers

01. Epitaxy, Fabrication, and Related Technologies

Name Affiliation, Country Presentation Title
Takaaki Mano
NIMS, Japan III-V heteroepitaxy on lattice mismatched (111)A-oriented substrates: application for the quantum light emitter and infrared detector
Yuji Zhao
Rice University, USA Selective Area Regrowth and Doping for Vertical GaN Power Devices
Subhananda Chakrabarti
Indian Institute of Technology, India Development of Indigenous Infrared Focal Plane Arrays at IIT Bombay
Kunal Mukherjee
Stanford University, USA Engineering Reliability against Dislocations in InAs Quantum dot Lasers on Silicon

02. RF and THz Devices

Name Affiliation, Country Presentation Title
Takuya Tsutsumi
NTT, Japan Fabrication Process Technology of InP-based Tera-Hertz ICs for Beyond 5G / 6G Wireless Communication Networks
Austin Minnich
California Institute of Technology, USA Cryogenic microwave noise characterization of GaN high electron mobility transistors

03. High Power and High Frequency Electron Devices

Name Affiliation, Country Presentation Title
Hyunseop Kim
Bristol University, UK Study on Dynamic RON in AlGaN/GaN HEMTs Using Substate Bias Measurement
Gokhan Atmaca
Hongik University, Asia (Korea) TCAD Modeling of β-Ga2O3 based High Power and High Frequency Devices
Andrei Kuznetsov
University of Oslo, Norway Gallium oxide polymorph heterostructures: physics, fabrication, and potential applications
Xiaohang Li
KAUST, Saudi Arabia Ultrawide bandgap CMOS and NMOS platform for heterogenous power integration
Jungwoo Oh
Yonsei University, Korea Atomic Layer Deposition of BeO for Wide-Bandgap Semiconductor Heterostructures

04. Wide Bandgap Semiconductors

Name Affiliation, Country Presentation Title
M. Ajmal Khan
FARMROID Co.Ltd. & CPR Riken, Japan Advances and Challenges in Transparent AlGaN UVB LEDs
Frank Bertram
Otto-von-Guericke-University Magdeburg, Germany AHighly Spatially Resolved STEM-CL Characterization of GaN-Based Power Devices
Jung-Hoon Song
Kongju National University, Korea Strain evolution and ex-situ strain-profiling in GaN-related devices by surface-plasmon enhanced Raman spectroscopy
Chao Shen
Fudan University, China GaN-based superluminescent diodes: advances and perspectives
Soon-Ku Hong
Chungnam National University, Korea Structural Defects in Ultra-Wide Bandgap Homoepitaxial Ga2O3 Epilayers
Hee Jin Kim
Lumileds, USA Recent Progress in Blue, Green and Red III-Nitride Epitaxy for Conventional and Micro LED Applications

05. Photonic and Optoelectronic Devices and Related Technologies

Name Affiliation, Country Presentation Title
Donguk Nam
Nanyang Technological University, Singapore On-chip light sources for integrated photonic quantum computing
Jae Woong Yoon
Hanyang University, Korea Non-Hermitian and topological photonics with binary Hamiltonians
Young Joon Hong
Sejong University, Korea Novel epitaxy of III-V for fabricating high-density hetero-integrated optoelectronics and flexible devices
Nobuhiko Nishiyama
Tokyo Institute of Technology, Japan Membrane lasers and photonic integrated circuits on Si using room temperature direct bonding
Munho Kim
Nanyang Technological University, Singapore Nanostructured Inorganic Wide Bandgap Semiconductors for Advanced Ultraviolet Photodetectors
Jooyoung Sung
DGIST, Korea Spatial Dynamics of Charge Carriers in Perovskite Thin Films.

06. Semiconductor Physics, Spintronics, Ferroelectronics, and Novel Device Concepts

Name Affiliation, Country Presentation Title
Kyoung-Whan Kim
KIST, Korea InGaN-based micro-LEDs fabricated by hydrogen passivation method
Gong Xiao
National University of Singapore, Singapore Opportunities of Oxide Semiconductor-based Logic and Memories Devices
Jun Sung Kim
POSTECH, Korea Novel magnetotransport properties of topological nodal-line fermions
Takashi Kimura
Kyushu University, Japan Study of nano-scale heat transports using magneto-thermoelectric effects
Sunghun Lee
Sejong University, Korea Ultrafast carrier dynamics and topological phases emerged in two dimensional materials heterostructures
Seung Chul Chae
Seoul National University, Korea Neuromorphic device application of ferroelectric fluorite oxide thin film
Si-Young Choi
POSTECH, Korea Atomic-scale understanding of metal-insulator transition in vanadium oxides
Yunseok Kim
Sungkyunkwan University, Korea Highly enhanced ferroelectricity in HfO2-based ferroelectrics by defect engineering
Byoung Chul Choi
University of Alabama, USA Synthetic Skyrmion-based Spin-Orbit Torque Nano-Oscillators

07. Nanostructure and Nano Characterization

Name Affiliation, Country Presentation Title
Stefano Sanguinetti
Universita' degli Studi di Milano-Bicocca, Italy Droplet Epitaxy Quantum Materials for Photonic and Energy Applications
Darius Kuciauskas
National Renewable Energy Laboratory, USA Photoluminescence characterization of thin film solar cells to identify and reduce voltage losses
Moonkyu Jang
Hallym University, Korea Impedance biosensors for cell growth and cell-drug reaction monitoring manufactured by semiconductor processes
Hyeong-Ryeol Park
UNIST, Korea Low voltage terahertz tunneling plasmonics in metal-insulator-metal nanojunctions

08. Oxide Semiconductors

Name Affiliation, Country Presentation Title
Yoon Seok Oh
UNIST, Korea Boosting square tensile strain to promote functional 0-dimensional defect dipoles and reversible control of ternary polar states.
Hyun Sung Kum
Yonsei University, Korea Remote epitaxy of freestanding single-crystalline complex-oxide membranes and applications
Bharat Jalan
University of Minnesota, USA Perovskite Stannates as High Mobility Oxide Semiconductors
Elison Matioli
EPFL, Switzerland Electrically accessible glass-like states in vanadium dioxide: a pathway for data storage and processing
Tianxiang Nan
Tsinghua University, China Magnon Spin Transport in Spinel Ferrite Thin Films

09. Nanocarbon and Novel 2D Materials/Devices

Name Affiliation, Country Presentation Title
Se-Young Jeong
Pusan National University, Korea A Growth of Cu(111) Thin Film with A Flat-Surface by Atomic-Sputtering Epitaxy and Colossal Oxidation Resistance
Jae-Won Jang
Dongguk University,Korea Bandgap control of molybdenum disulfide thin-film transistor by tip-based nanolithography
Soaram Kim
Texas A&M University, USA Quasi-Freestanding Epitaxial Graphene-based IoT Sensors for Remote

10. Organic Semiconductors and Flexible Materials

Name Affiliation, Country Presentation Title
Tae Hee Han
Hanyang Unversity, Korea Mechanically resilient Perovskite Solar Cells based on Spontaneous Hybrid Cross-linked Network Formation
Hyunseong Kum
Yonsei Unversity, Korea Remote epitaxy of freestanding single-crystalline complex-oxide membranes and applications
Joo Yeon Kim
ETRI, Korea Metal Halide Perovskites as Color Conversion Layers in Display Applications
Namyoung Ahn
Los Alamos National Lab, USA Development of Colloidal Quantum Dot Laser Diodes
Whi Dong Kim
KITECH, Korea The study of carrier multiplication in quantum dot solids via detection of transient photocurrent
Han-Hee cho
UNIST, Korea A Photoelectrochemical Tandem Cell Based on Organic Semiconductors for Overall Water Splitting
Hobeom Kim
GIST, Korea Defect engineering of metal-halide perovskites for next-generation optoelectronic devices
Soyeon Kim
KIMS, Korea Design and application of organic & inorganic materials for flexible optoelectronics

11. Optoelectronics, Integrated Photonics, and III-V Electronic Devices on Si

Name Affiliation, Country Presentation Title
Minjoo Lee
UIUC, USA New directions in MBE growth for integrated photonics
Jonathan Klamkin
UCSB, USA Direct Heteroepitaxy of Compound Semiconductors on CMOS-compatible Silicon for Photonics Applications
Kei May Lau
The Chinese University of Hongkong, HongKong Monolithic lasers/photodetectors Grown on SOI for Silicon Photonics
Tatsuro Maeda
AIST,Japan Monolithic 3D integrated devices by layer transfer technology of post-Si materials

SS1. Emerging Materials and Devices

Name Affiliation, Country Presentation Title
Zakaria Al Balushi
UC Berkeley, USA Spatially Controlled Growth of 2D Materials
Hyungjin Kim
Yonsei University, Korea Monolayer Semiconductors with High Luminescence Efficiency
Soo Min Kim
Sookmyung Woman University, Korea Large-area uniform multilayer hexagonal boron nitride growth
Chao-Ching Cheng
Taiwan Semiconductor Manufacturing Company, Taiwan Gate-All-Around Short-Channel Transistor of 2D Materials
Wei-Bo Gao
National University of Singapore, Singapore Valleytronics by layer engineering
Houk Jang
Brookhaven National Laboratory, USA In-sensor processing via integration of optoelectronic devices

SS2. Self-Driving Mobility and AI Applications

Name Affiliation, Country Presentation Title
Byungjin Cho
Chungbuk National University, Korea Strategy to implement the synaptic devices with heterosynaptic plasticity
Seyoung Kim
POSTECH, Korea Resistive Memories and their Cross-point Arrays for AI Computation
Jiyong Woo
Kyungpook National University, Korea Energy-efficient Neuromorphic Systems Driven by Emerging Device Technologies
Yonghun Kim
KIMS, Korea All Solid-State Synapse Device Arrays using 2D channel/LiSiOx Electolyte for Next-Generation Neuromorphic Edge Computing

SS3. High-Resolution and Multi-Functional Display Technology

Kazuhiro Ohkawa
King Abdullah University of Science and Technology (KAUST), Saudi Arabia InGaN-based micro-LEDs fabricated by hydrogen passivation method
Yong-Ho Ra
Jeonbuk National University, Korea Group III-Nitride Based Nanorod Structures For Next-Generation Display Applications
Jaehoon Lim
Sungkyunkwan University , Korea Heteroepitaxial Chemistry of Zinc Chalcogenides on InP Nanocrystals Enabling Defect-free Heterointerface

SS4. New-Conceptual Quantum Information and Communication

Name Affiliation, Country Presentation Title
Jieun Lee
Seoul National University, Korea Electrical manipulation of quantum light sources in 2D materials
Dohun Kim
Seoul National University, Korea Coherence of a singlet-triplet qubit driven by magnetic field gradient in isotopically purified silicon
Jehyung Kim
UNIST, Korea Interfacing single-photon sources to real-world platforms
Donghun Lee
Korea University, Korea Quantum sensing and imaging based on solid-state spin qubits in diamond
Akira Fujiwara
NTT Basic Research Laboratories, Japan Electron manipulation in a silicon dynamic quantum dot
DongKeun Ki
The University of Hong Kong, Hong Kong Quantum Coherence and Correlations in Multilayered Graphene Heterostructures
Sangwon Oh
KRISS, Korea Diamond on the Brain: Quantum Diamond Magnetometers for Imaging Neuronal Connectivity
Myung-Joong Hwang
Duke Kunshan University, China Frustration of quantum light and motion induced by qubits

SS5. Highly Efficient Energy-harvesting Technology

Jin Wook Lee
Sungkyunkwan University, Korea Characterization and Mitigation of Defects in Metal Halide Perovskites for Optoelectronic Applications
Hui-Seon Kim
Inha University, Korea Interface engineering for perovskite layer
Jongchul Lim
Chungnam National University, Korea Insights into Charge Carrier Dynamics in Metal Halide Perovskites
Hui Joon Park
Hanyang University, Korea Sn-based perovskite: high performance Pb-free perovskite photodetector and all-perovskite tandem solar cell
Wooseok Yang
Sungkyunkwan University, Korea Efficient unassisted solar water splitting by photoelectrochemical tandem cells
Sang-Wan Ryu
Chonnam National University, Korea Hierarchical Si-ZnO Nanowires for Photoelectrochemical Solar Hydrogen Generation
Jae Sung Yun
University of Surrey, UK Scanning Probe Microscopy Investigation of Wide Bandgap Halide Perovskites Solar Cells

SS6. Advanced Convergence Technologies

Name Affiliation, Country Presentation Title
Jihye Kim
Issac Research, Korea Atomic-Layer-Deposition for the Advanced Technology
Dong-Chul Shin
Samsung Advanced Institute of Technology Korea Impact of lattice constant engineering for long wavelength InGaN μLEDs
Jarek Dolak
SVCS, Czech Unknown Silicon Valley in the Heart of Europe
Sanghyun Jo
Samsung Advanced Institute of Technology, Korea Negative Differential Capacitance in Ultrathin Ferroelectric Hafnia
Venugopal Govindarajulu
Yield Engineering Systems, USA TGV Etching for Advanced Packaging - HVM Enablement