Invited Speakers

  • Program
  • Invited Speakers

01. Epitaxy, Fabrication, and Related Technologies

Name Affiliation, Country Presentation Title
Takaaki Mano
NIMS, Japan III-V heteroepitaxy on lattice mismatched (111)A-oriented substrates: application for the quantum light emitter and infrared detector
Sanjay Krishna
Ohio State University, USA TBA
Yuji Zhao
Rice University, USA TBA
Subho Chakrabarti
Indian Institute of Technology, India TBA
Kunal Mukherjee
Stanford University, USA Engineering Reliability against Dislocations in InAs Quantum dot Lasers on Silicon

02. RF and THz Devices

Name Affiliation, Country Presentation Title
Takuya Tsutsumi
NTT, Japan Fabrication Process Technology of InP-based Tera-Hertz ICs for Beyond 5G / 6G Wireless Communication Networks

03. High Power and High Frequency Electron Devices

Name Affiliation, Country Presentation Title
Hyunseop Kim
Bristol University, UK Study on Dynamic RON in AlGaN/GaN HEMTs Using Substate Bias Measurement
Gokhan Atmaca
Hongik University, Asia (Korea) TCAD Modeling of β-Ga2O3 based High Power and High Frequency Devices
Andrei Kuznetsov
University of Oslo, Norway Gallium oxide polymorph heterostructures: physics, fabrication, and potential applications
Xiaohang Li
KAUST, Saudi Arabia Ultrawide bandgap CMOS and NMOS platform for heterogenous power integration
Jang-kwon Lim
RISE, Sweden WBG Power Device Modelling, Characterizations, and Reliability Studies

04. Wide Bandgap Semiconductors

Name Affiliation, Country Presentation Title
M. Ajmal Khan
FARMROID Co.Ltd. & CPR Riken, Japan Advances and Challenges in Transparent AlGaN UVB LEDs
Frank Bertram
Otto-von-Guericke-University Magdeburg, Germany AHighly Spatially Resolved STEM-CL Characterization of GaN-Based Power Devices
Jung-Hoon Song
Kongju National University, Korea Strain evolution and ex-situ strain-profiling in GaN-related devices by surface-plasmon enhanced Raman spectroscopy
Chao Shen
Fudan University, China GaN-based superluminescent diodes: advances and perspectives
Soon-Ku Hong
Chungnam National University, Korea Structural Defects in Ultra-Wide Bandgap Homoepitaxial Ga2O3 Epilayers
Hee Jin Kim
Lumileds, USA Recent Progress in Blue, Green and Red III-Nitride Epitaxy for Conventional and Micro LED Applications

05. Photonic and Optoelectronic Devices and Related Technologies

Name Affiliation, Country Presentation Title
Donguk Nam
Nanyang Technological University, Singapore On-chip light sources for integrated photonic quantum computing
Jae Woong Yoon
Hanyang University, Korea Non-Hermitian and topological photonics with binary Hamiltonians
Young Joon Hong
Sejong University, Korea TBA
Nobuhiko Nishiyama
Tokyo Institute of Technology, Japan Membrane lasers and photonic integrated circuits on Si using room temperature direct bonding
Munho Kim
Nanyang Technological University, Singapore Nanostructured Inorganic Wide Bandgap Semiconductors for Advanced Ultraviolet Photodetectors
Jooyoung Sung
DGIST, Korea Spatial Dynamics of Charge Carriers in Perovskite Thin Films.

06. Semiconductor Physics, Spintronics, Ferroelectronics, and Novel Device Concepts

Name Affiliation, Country Presentation Title
Kyoung-Whan Kim
KIST, Korea InGaN-based micro-LEDs fabricated by hydrogen passivation method
Gong Xiao
National University of Singapore, Singapore Opportunities of Oxide Semiconductor-based Logic and Memories Devices
Jun Sung Kim
POSTECH, Korea Novel magnetotransport properties of topological nodal-line fermions
Takashi Kimura
Kyushu University, Japan Study of nano-scale heat transports using magneto-thermoelectric effects
Kyoung-Whan Kim
Sunghun Lee
Sejong University, Korea TBA
Seung Chul Chae
Seoul National University, Korea TBA
Si-Young Choi
Yunseok Kim
Sungkyunkwan University, Korea Highly enhanced ferroelectricity in HfO2-based ferroelectrics by defect engineering
J. Joshua Yang
University of Southern California, USA Thousands Of Conductance Levels In Memristors Integrated On CMOS

07. Nanostructure and Nano Characterization

Name Affiliation, Country Presentation Title
Stefano Sanguinetti
Universita' degli Studi di Milano-Bicocca, Italy Droplet Epitaxy Quantum Materials for Photonic and Energy Applications
Darius Kuciauskas
National Renewable Energy Laboratory, USA Photoluminescence characterization of thin film solar cells to identify and reduce voltage losses
Moonkyu Jang
Hallym University, Korea Impedance biosensors for cell growth and cell-drug reaction monitoring manufactured by semiconductor processes
Hyeong-Ryeol Park
UNIST, Korea Low voltage terahertz tunneling plasmonics in metal-insulator-metal nanojunctions

08. Oxide Semiconductors

Name Affiliation, Country Presentation Title
Yoon Seok Oh
UNIST, Korea Boosting square tensile strain to promote functional 0-dimensional defect dipoles and reversible control of ternary polar states.
Hyun Sung Kum
Yonsei University, Korea TBA
Bharat Jalan
University of Minnesota, USA Perovskite Stannates as High Mobility Oxide Semiconductors
Elison Matioli
EPFL, Switzerland Electrically accessible glass-like states in vanadium dioxide: a pathway for data storage and processing
Woo Jin Kim
Stanford University, USA TBA
Tianxiang Nan
Tsinghua University, China Magnon Spin Transport in Spinel Ferrite Thin Films

09. Nanocarbon and Novel 2D Materials/Devices

Name Affiliation, Country Presentation Title
Se-Young Jeong
Pusan National University, Korea A Growth of Cu(111) Thin Film with A Flat-Surface by Atomic-Sputtering Epitaxy and Colossal Oxidation Resistance

10. Organic Semiconductors and Flexible Materials

Name Affiliation, Country Presentation Title
Tae Hee Han
Hanyang Unversity, Korea Mechanically resilient Perovskite Solar Cells based on Spontaneous Hybrid Cross-linked Network Formation
Hyunseong Kum
Yonsei Unversity, Korea TBA
Joo Yeon Kim
ETRI, Korea Metal Halide Perovskites as Color Conversion Layers in Display Applications
Nam Young Ahn
Los Alamos National Lab, USA TBA
Hwi Dong Kim
Han-Hee cho
UNIST, Korea A Photoelectrochemical Tandem Cell Based on Organic Semiconductors for Overall Water Splitting
Ho Beom Kim
GIST, Korea Defect engineering of metal-halide perovskites for next-generation optoelectronic devices
Soyeon Kim
KIMS, Korea Design and application of organic & inorganic materials for flexible optoelectronics

11. Optoelectronics, Integrated Photonics, and III-V Electronic Devices on Si

Name Affiliation, Country Presentation Title
Minjoo Lee
UIUC, USA New directions in MBE growth for integrated photonics
Jonathan Klamkin
Kei May Lau
The Chinese University of Hongkong, HongKong Monolithic lasers/photodetectors Grown on SOI for Silicon Photonics
Tatsuro Maeda
AIST,Japan Monolithic 3D integrated devices by layer transfer technology of post-Si materials

SS1. Emerging Materials and Devices

Name Affiliation, Country Presentation Title
Zafer Mutlu
University of Arizona, USA TBA
Zakaria Al Balushi
UC Berkeley, USA TBA
Hyungjin Kim
Yonsei University, Korea Monolayer Semiconductors with High Luminescence Efficiency
Han Wang
University of Southern California/TSMC, USA TBA
Soo Min Kim
Sookmyung Woman University, Korea Large-area uniform multilayer hexagonal boron nitride growth
Chao-Ching Cheng
Taiwan Semiconductor Manufacturing Company, Taiwan Gate-All-Around Short-Channel Transistor of 2D Materials
Wei-Bo Gao
National University of Singapore, Singapore Valleytronics by layer engineering
Houk Jang
Brookhaven National Laboratory, USA In-sensor processing via integration of optoelectronic devices

SS2. Self-Driving Mobility and AI Applications

Name Affiliation, Country Presentation Title
Byungjin Cho
Chungbuk National University, Korea Strategy to implement the synaptic devices with heterosynaptic plasticity
Seyoung Kim
Jiyong Woo
Kyungpook National University, Korea Energy-efficient Neuromorphic Systems Driven by Emerging Device Technologies
Yonghun Kim

SS3. High-Resolution and Multi-Functional Display Technology

Kazuhiro Ohkawa
King Abdullah University of Science and Technology (KAUST), Saudi Arabia InGaN-based micro-LEDs fabricated by hydrogen passivation method
Yong-Ho Ra
Jeonbuk National University, Korea Group III-Nitride Based Nanorod Structures For Next-Generation Display Applications
Jaehoon Lim
Sungkyunkwan University , Korea Heteroepitaxial Chemistry of Zinc Chalcogenides on InP Nanocrystals Enabling Defect-free Heterointerface

SS4. New-Conceptual Quantum Information and Communication

Name Affiliation, Country Presentation Title
Jieun Lee
Seoul National University, Korea Electrical manipulation of quantum light sources in 2D materials
Dohun Kim
Seoul National University, Korea Coherence of a singlet-triplet qubit driven by magnetic field gradient in isotopically purified silicon
Jehyung Kim
UNIST, Korea Interfacing single-photon sources to real-world platforms
Donghun Lee
Korea University, Korea Quantum sensing and imaging based on solid-state spin qubits in diamond
Akira Fujiwara
NTT Basic Research Laboratories, Japan TBA
DongKeun Ki
The University of Hong Kong, Hong Kong TBA
Sangwon Oh
Myung-Joong Hwang
Duke Kunshan University, China TBA

SS5. Highly Efficient Energy-harvesting Technology

Jin Wook Lee
Sungkyunkwan University, Korea Characterization and Mitigation of Defects in Metal Halide Perovskites for Optoelectronic Applications
Hui-Seon Kim
Inha University, Korea TBA
Jongchul Lim
Chungnam National University, Korea Insights into Charge Carrier Dynamics in Metal Halide Perovskites
Hui Joon Park
Hanyang University, Korea Sn-based perovskite: high performance Pb-free perovskite photodetector and all-perovskite tandem solar cell
Wooseok Yang
Sungkyunkwan University, Korea TBA
Sang-Wan Ryu
Chonnam National University, Korea Hierarchical Si-ZnO Nanowires for Photoelectrochemical Solar Hydrogen Generation
Jae Sung Yun
University of Surrey, UK Scanning Probe Microscopy Investigation of Wide Bandgap Halide Perovskites Solar Cells

SS6. Advanced Convergence Technologies

Name Affiliation, Country Presentation Title
Jihye Kim
Issac Research, Korea TBA
Dong-Cheol Shin
Samsung Advanced Institute of Technology Korea TBA
Jarek Dolak
SVCS, Czech Unknown Silicon Valley in the Heart of Europe
Sanghyun Jo
Samsung Advanced Institute of Technology, Korea Negative Differential Capacitance in Ultrathin Ferroelectric Hafnia
Venugopal Govindarajulu
Yield Engineering Systems, USA TGV Etching for Advanced Packaging - HVM Enablement